Being in a technological battle with Samsung, Toshiba tries to reinstate its position at the top of the flash memory production market with the two new products it presented today. Employing the 70 nm respectively the 54 nm (nanometer) technology process, Toshiba and SanDisk have managed to achieve the highest density of memory for a single chip reaching a level of 1GB (8 Gb) and 2 GB (16 Gb) on a single die. Today the availability of the two new products was also announced for the late 1st quarter in the case of the 2 GB version, while the 1 GB NAND Flash chip can be purchased immediately.

An obvious implication of this new products is the possibility of developing higher storage capacity devices with smaller dimensions. Basically the next iPod Nano, iPhone, or any other device equipped with flash memory might be even thinner and will probably pack more storage by the end of the year.

Filed under Storage